Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYuta Endo, Junichi Koezuka, Yuichi Sato
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Abstract
An object of an embodiment of the present invention is to provide a semiconductor device which includes a transistor including an oxide semiconductor with high field-effect mobility, a small variation in threshold voltage, and high reliability. The semiconductor device includes a transistor which includes an insulating substrate from which oxygen is released by heat treatment and an oxide semiconductor film over the insulating substrate. A channel is formed in the oxide semiconductor film. The insulating substrate from which oxygen is released by heat treatment can be manufactured by implanting oxygen ions into at least a region of an insulating substrate on the side provided with the oxide semiconductor film.
Claims7
A semiconductor device comprising:
- a glass substrate from which a gas with a mass-to-charge ratio of 32 is detected by thermal desorption spectroscopy;
- an oxide semiconductor film over and in direct contact with the glass substrate, the oxide semiconductor film comprising a first region and a second region;
- a gate insulating film over the oxide semiconductor film;
- and
- a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,
- wherein an amount of the gas detected by the thermal desorption spectroscopy on an oxygen atom basis is greater than or equal to 3.0×1014 atoms/cm2, and
- wherein a resistance of the first region is lower than a resistance of the second region.
A semiconductor device comprising:
- a glass substrate from which a gas with a mass-to-charge ratio of 32 is detected by thermal desorption spectroscopy;
- an oxide semiconductor film over and in direct contact with the insulating glass substrate, the oxide semiconductor film comprising a first region and a second region;
- a pair of electrodes at least partly in contact with the first region of the oxide semiconductor film;
- a gate insulating film over the oxide semiconductor film;
- and
- a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,
- wherein an amount of the gas detected by the thermal desorption spectroscopy on an oxygen atom basis is greater than or equal to 3.0×1014 atoms/cm2, and
- wherein a resistance of the first region is lower than a resistance of the second region.
A semiconductor device comprising:
- a glass substrate from which a gas with a mass-to-charge ratio of 32 is detected by thermal desorption spectroscopy;
- an oxide semiconductor film over and in direct contact with the glass substrate;
- a gate insulating film over the oxide semiconductor film;
- and
- a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,
- wherein an amount of the gas detected by the thermal desorption spectroscopy on an oxygen atom basis is greater than or equal to 3.0×1014 atoms/cm2.
Dependencies are inferred from the claim text.