Nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJai-Ick Son, Sunghoon Kim
Life of this patent
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Abstract
A nonvolatile memory device includes a memory cell array and a peripheral circuit. The peripheral circuit is connected to the memory cell array through conductive lines and includes transistors. Each of the transistors is formed on the substrate and includes first and second regions and a gate electrode. In at least one of the transistors, the first region is connected to at least one of the conductive lines through first contact plugs extending in the direction perpendicular to the substrate, and second contact plugs extending in the direction perpendicular to the substrate. A contact area of each of the first contact plugs is different from a contact area of each of the second contact plugs.
Claims20
A nonvolatile memory device, comprising:
- a memory cell array including a plurality of cell strings, wherein each of the cell strings comprises memory cells stacked in a direction perpendicular to a substrate;
- and
- a peripheral circuit connected to the memory cell array through a plurality of conductive lines, wherein the peripheral circuit comprises a plurality of transistors,
- wherein each of the transistors is formed on the substrate,
- wherein each of the transistors includes first and second regions, wherein the first and second regions comprise a conductive material different from a material included in the substrate, and wherein a gate electrode is disposed between the first and second regions,
- wherein in at least one of the transistors, the first region is connected to at least one of the conductive lines through a plurality of first contact plugs extending in the direction perpendicular to the substrate, and a plurality of second contact plugs extending in the direction perpendicular to the substrate,
- wherein each of the second contact plugs is disposed on a respective first contact plug, and
- wherein a contact area of each of the first contact plugs is different from a contact area of each of the second contact plugs.
A nonvolatile memory device, comprising:
- a memory cell array including a plurality of cell strings, wherein each of the cell strings comprises memory cells stacked in a direction perpendicular to a substrate;
- and
- a peripheral circuit connected to the memory cell array through a plurality of conductive lines, wherein the peripheral circuit comprises a plurality of transistors,
- wherein at least one of the transistors includes a source region and a drain region,
- wherein the source region is connected to a first conductive line of the plurality of conductive lines through a plurality of source contact plugs extending in a direction perpendicular to the substrate, wherein the drain region is connected to a second conductive line of the plurality of conductive lines through a plurality of drain contact plugs extending in the direction perpendicular to the substrate,
- wherein a contact area of each of the source contact plugs is different from a contact area of each of the drain contact plugs, and
- wherein the contact area of each of the source and drain contact plugs is an area parallel with the substrate.
Dependencies are inferred from the claim text.