US 9,318,498 B2 · Buried hard mask for embedded semiconductor device patterning

Abstract

Methods and apparatus for manufacturing semiconductor devices, and such semiconductor devices, are described. According to various aspects of the disclosure, a semiconductor device can be manufactured by forming a core region of the semiconductor device and forming a periphery region of the semiconductor device. A first polysilicon region can then be formed over the core and periphery regions of the semiconductor device. A first mask is formed on the first poly silicon layer and a second polysilicon layer is disposed such that the second polysilicon layer covers the first mask. A second mask can then be formed on the second polysilicon layer. After forming the second mask, portions of the first and second polysilicon layers that are uncovered by either the first or second masks are removed.

Claims20

Dependent claims

A method of manufacturing an embedded semiconductor device, comprising:

forming a core region of the semiconductor device, wherein the core region is configured to contain one or more memory devices;
forming a periphery region of the semiconductor device, wherein the periphery region is configured to contain logical gates to control the one or more memory devices;
disposing a first polysilicon layer over the core and periphery regions of the semiconductor device;
forming a first mask on the first polysilicon layer;
disposing a second polysilicon layer such that the second polysilicon layer covers the first mask;
forming a second mask on the second polysilicon layer in the core region without forming the second mask in the periphery region;
and
removing portions of the first and second polysilicon layers that are uncovered by either of the first and second masks.

5 more elements

Dependencies are inferred from the claim text.

Buried hard mask for embedded semiconductor device patterning

Life of this patent

Buried hard mask for embedded semiconductor device patterning

Life of this patent

Abstract

Claims20