Methods of forming positioned landing pads and semiconductor devices including the same

A method of forming patterns, the method comprising:

• forming first lines on a substrate, each of the first lines extending in a first direction;
• forming first and second spacers on respective opposing sidewalls of each of the first lines;
• forming second lines between respective ones of the first lines, each of the second lines extending in the first direction;
• forming division lines through at least upper portions of the first and second lines and the first and second spacers to divide an upper portion of each of the first spacers into a plurality of first spacer patterns disposed in the first direction, and divide an upper portion of each of the second spacers into a plurality of second spacer patterns disposed in the first direction, each of the division lines extending in a second direction substantially perpendicular to the first direction;
• replacing ones of the first and second spacer patterns in a zigzag pattern with third and fourth spacer patterns, respectively;
• removing upper portions of the first and second spacer patterns not replaced with the third and fourth spacer patterns and upper portions of the second lines adjacent thereto to form first trenches;
• and
• forming patterns to fill the first trenches.