Semiconductor fin devices and method of fabricating the semiconductor fin devices
AssigneeSamsung Electronics Co., Ltd.
InventorsMirco Cantoro, Taeyong Kwon, Sangsu Kim, Jae-Hwan Lee
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Abstract
A semiconductor device includes a substrate, an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate, and a channel-forming structure comprising crystalline semiconductor material. The channel-forming structure has a lower portion located in the trench and fins extending upright on the lower portion, where the fins are spaced from each other and are each narrower than an opening of the trench, and the lower portion of the channel forming structure has a higher crystal defect density than the fins of the channel forming structure.
Claims20
A semiconductor device comprising:
- a substrate;
- an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate;
- a channel-forming structure comprising crystalline semiconductor material, the channel-forming structure having a lower portion located in the trench and fins extending upright on the lower portion, wherein the fins are spaced from each other and are each narrower than an opening of the trench, and the lower portion of the channel-forming structure has a higher crystal defect density than the fins of the channel-forming structure.
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate, wherein a depth-to-width aspect ratio of the trench is between 1:1 and 3:1 both inclusive;
- and
- a crystalline channel-forming structure disposed in the trench, the crystalline channel-forming structure having an epitaxial lower portion disposed on the surface portion of the semiconductor substrate and occupying a bottom portion of the trench, and epitaxial fins extending upright on the lower portion,
- wherein the epitaxial fins are spaced from each other in a widthwise direction of the trench and are each narrower than the trench in the widthwise direction.
A semiconductor device comprising:
- a substrate;
- an insulating layer disposed on the substrate and having a first trench exposing a first surface portion of the substrate and a second trench exposing a second surface portion of the substrate;
- a first channel-forming structure comprising crystalline semiconductor material, the first channel-forming structure having a first lower portion located in the first trench and first fins extending upright on the first lower portion, wherein the first fins are of a first conductivity type, are spaced from each other and are each narrower than an opening of the first trench, and wherein the first lower portion of the first channel-forming structure has a higher crystal defect density than the first fins of the first channel-forming structure;
- and
- a second channel-forming structure comprising crystalline semiconductor material, the second channel-forming structure having a second lower portion located in the second trench and second fins extending upright on the second lower portion, wherein the second fins are of a second conductivity type, are spaced from each other and are each narrower than an opening of the second trench, and wherein the second lower portion of the second channel-forming structure has a higher crystal defect density than the second fins of the second channel-forming structure.
Dependencies are inferred from the claim text.