Semiconductor device and formation thereof

A semiconductor device comprising:

• a first active region adjacent a first side of a shallow trench isolation (STI) region, the first active region comprising:
• a first proximal fin adjacent the STI region and having a first proximal fin height, the first proximal fin being a first projection of a substrate;
• and
• a first distal fin adjacent the first proximal fin and having a first distal fin height, the first distal fin being a second projection of the substrate, the first proximal fin height less than the first distal fin height, the first proximal fin disposed between the STI region and the first distal fin;
• and
• a second active region adjacent a second side of the STI region, the second active region comprising:
• a second proximal fin adjacent the STI region and having a second proximal fin height, the second proximal fin being a third projection of the substrate;
• and
• a second distal fin adjacent the second proximal fin and having a second distal fin height, the second distal fin being a fourth projection of the substrate, the second proximal fin height less than the second distal fin height, the second proximal fin disposed between the STI region and the second distal fin.

A semiconductor device comprising:

• a first active region having a first proximal fin, the first proximal fin being a first projection of a substrate;
• a second active region having a second proximal fin, the second proximal fin being a second projection of the substrate;
• a metal connect coupling a source/drain region of the first active region to a source/drain region of the second active region;
• and
• a shallow trench isolation (STI) region between the first proximal fin and the second proximal fin, the metal connect extending through the STI region, the STI region comprising an oxide over a first portion of the metal connect, a top surface of the oxide co-planar with a top surface of a second portion of the metal connect.