US 9,318,484 B2 · Semiconductor device

Abstract

The semiconductor device of the present invention comprises first and second transistors and first and second capacitors. One of source and drain electrodes of the first transistor is electrically connected to a first wiring, the other is electrically connected to a second wiring, and a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor and one of electrodes of the first capacitor. The other of the source and drain electrodes of the second transistor is electrically connected to the first wiring, and a gate electrode of the second transistor is electrically connected to one of electrodes of a second capacitor and a fifth wiring. The other electrode of the first capacitor is electrically connected to a third wiring, and the other electrode of the second capacitor is eclectically connected to a fourth wiring.

Claims16

Dependent claims

A semiconductor device comprising:

a first transistor;
a second transistor;
a first capacitor;
and
a second capacitor,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to a first wiring,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a second wiring,
wherein a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor and one of electrodes of the first capacitor,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the first wiring,
wherein a gate electrode of the second transistor is connected to one of electrodes of the second capacitor and a fifth wiring,
wherein the other electrode of the first capacitor is electrically connected to a third wiring, and
wherein the other electrode of the second capacitor is electrically connected to a fourth wiring.

9 more elements

A semiconductor device comprising:

a first transistor;
a second transistor;
a diode-connected transistor;
a first capacitor;
and
a second capacitor,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to a first wiring,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a second wiring,
wherein a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor and one of electrodes of the first capacitor,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the first wiring,
wherein a gate electrode of the second transistor is connected to one of electrodes of the second capacitor and the diode-connected transistor,
wherein the other electrode of the first capacitor is electrically connected to a third wiring, and
wherein the other electrode of the second capacitor is electrically connected to a fourth wiring.

10 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims16