Reverse blocking transistor device
AssigneeInfineon Technologies Austria AG
InventorsAnton Mauder, Franz Hirler
Life of this patent
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Abstract
A transistor device includes at least one transistor cell. The cell includes a drift region, a source region, a body region arranged between the source region and the drift region, and a drain region. The drift region is arranged between the body region and the drain region. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric. A channel region of a doping type complementary to a doping type of the drain region is arranged between the drift region and the drain region. A drift control region is adjacent the drift region and dielectrically insulated from the drift region and the channel region by a drift control region dielectric. A first switch is coupled between the drift control region and the drain region.
Claims25
A transistor device comprising at least one transistor cell, the at least one transistor cell comprising:
- a drift region, a source region, a body region arranged between the source region and the drift region, and a drain region, wherein the drift region is arranged between the body region and the drain region;
- a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric;
- a channel region of a doping type complementary to a doping type of the drain region that is arranged between the drift region and the drain region;
- a drift control region adjacent the drift region and dielectrically insulated from the drift region and the channel region by a drift control region dielectric;
- and
- a first switch coupled between the drift control region and the drain region.
A method for operating a transistor device, the transistor device comprising a drift region, a source region, a body region arranged between the source region and the drift region, and a drain region, wherein the drift region is arranged between the body region and the drain region;
- a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric;
- a channel region of a doping type complementary to a doping type of the drain region that is arranged between the drift region and the drain region;
- a drift control region adjacent the drift region and dielectrically insulated from the drift region, and the channel region by a drift control region dielectric;
- and
- a first switch coupled between the drift control region and the drain region;
- the method comprising:
- switching on the first switch when the transistor device is in an on-state;
- and
- switching off the first switch when the transistor device is in an off-state.
Dependencies are inferred from the claim text.