Electrostatic discharge protection device

Abstract

In one aspect, a silicon-controller rectifier (SCR) includes a first N+ region; a first P+ region; a second N+ region; a second P+ region; and a P+/Intrinsic/N+ (PIN) diode disposed between the first P+ region and the second N+ region. The PIN diode includes a third N+ region, a third P+ region and an intrinsic material disposed between the third N+ region and the third P+ region. An anode terminal of the SCR connects to the first N+ region and the first P+ region and a cathode terminal of the SCR connects to the second N+ region and the second P+ region. A first distance between the third N+ region and the third P+ region controls the trigger voltage of the SCR and a second distance corresponding to a length of each of the third P+ region and the third N+ region controls the holding voltage of the SCR.

Dependencies are inferred from the claim text.