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US 9,318,480 B2Granted
Electrostatic discharge protection circuit
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHsin-Yen Hwang
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Abstract
A device comprises a high voltage N well and a high voltage P well over an N+ buried layer, a high voltage P-type implanted region in the high voltage N well, a first N+ region over the high voltage P-type implanted region and a P+ region and a second N+ region over the high voltage P well.
Claims18
A device comprising:
- a high voltage N well and a high voltage P well over an N+ buried layer;
- a high voltage P-type implanted region in the high voltage N well;
- a first N+ region over the high voltage P-type implanted region;
- and
- a P+ region and a second N+ region over the high voltage P well, wherein the high voltage N well, the high voltage P well, the N+ buried layer, the high voltage P-type implanted region, the first N+ region, the P+ region and the second N+ region form a protection structure comprising a silicon-controlled rectifier and a diode connected in series, wherein an anode of the diode is connected to the silicon-controlled rectifier.
2 more elements
A structure comprising:
- a N+ buried layer;
- a high voltage N well disposed on the N+ buried layer;
- a high voltage P type implanted region disposed on the high voltage N well and partially within the high voltage N well;
- a first N+ region disposed on the high voltage P type implanted region;
- a high voltage P well disposed on the N+ buried layer;
- a second N+ region disposed on the high voltage P well;
- and
- a P+ region disposed on the high voltage P well, wherein the high voltage N well, the high voltage P well, the N+ buried layer, the high voltage P type implanted region, the first N+ region, the P+ region and the second N+ region form a protection structure comprising a silicon-controlled rectifier and a diode connected in series, wherein an anode of the diode is connected to the silicon-controlled rectifier.
5 more elements
A device comprising:
- a diode having a cathode formed in a first N+ region and an anode formed in a high voltage P-type implanted region, wherein the high voltage P-type implanted region is in a high voltage N well over an N+ buried layer;
- and
- a silicon-controlled rectifier comprising a PNP transistor and an NPN transistor, wherein the PNP transistor comprises:
- a base interconnected with a collector of the NPN transistor;
- a collector interconnected with a base of the NPN transistor;
- and
- an emitter interconnected with the anode of the diode.
4 more elements
Dependencies are inferred from the claim text.