Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a first substrate including a first substrate body, and a first surface layer that is provided over a principal surface of the first substrate body, and includes a first surface film, a first electrode having a first surface exposed at an outermost surface of the first surface film, and a second electrode having a second surface exposed at the outermost surface of the first surface film;
• a second substrate including a second substrate body, and a second surface layer that is provided over a principal surface of the second substrate body, and includes a second surface film, a third electrode having a third surface exposed at an outermost surface of the second surface film, and a fourth electrode having a fourth surface exposed at the outermost surface of the second surface film, where the second substrate is directly bonded to the first substrate such that the second surface layer is in contact with the first surface layer;
• and
• a functional film provided between the second surface of the second electrode and the fourth surface of the fourth electrode, wherein
• the outermost surface of the first surface film, the first surface of the first electrode and the second surface of the second electrode are planarized flush with each other,
• the outermost surface of the second surface film, the third surface of the third electrode and the fourth surface of the fourth electrode are planarized flush with each other,
• the first surface of the first electrode and the third surface of the third electrode are bonded together so as to be in contact with each other, and
• the second electrode, the functional film, and the fourth electrode constitute a passive element.