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US 9,318,446 B2Granted
Metal deposition on substrates
AssigneeInfineon Technologies Austria AG
InventorsKae-Horng Wang, Francisco Javier Santos Rodriguez, Michael Knabl, Guenther Koffler
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Abstract
Various techniques, methods, devices and apparatus are provided where an isolation layer is provided at a peripheral region of the substrate, and one or more metal layers are deposited onto the substrate.
Claims19
A method comprising:
- providing a semiconductor wafer;
- forming an isolation layer over the semiconductor wafer, the isolation layer being substantially limited to a peripheral region of the semiconductor wafer;
- and
- forming at least one first metal layer over a side of the semiconductor wafer.
1 more element
A device comprising:
- a semiconductor wafer;
- an isolation layer substantially limited to a peripheral region of the semiconductor wafer;
- and
- a metal layer over a side of the semiconductor wafer, the metal layer being at least partially adjacent the isolation layer.
1 more element
A method comprising:
- providing a substrate comprising a thinned semiconductor substrate with a ring thicker than the thinned semiconductor substrate at a peripheral region;
- forming an isolation layer over the substrate, the isolation layer being substantially limited to the peripheral region of the substrate;
- and
- forming at least one first metal layer over a side of the substrate.
1 more element
A device comprising:
- a substrate comprising a center region and a ring provided in a peripheral region, the ring being thicker than the center region;
- an isolation layer substantially limited to the peripheral region of the substrate, wherein the isolation layer at least partially covers the ring;
- and
- a metal layer over a side of the substrate, the metal layer being at least partially adjacent the isolation layer.
1 more element
Dependencies are inferred from the claim text.