Semiconductor structures comprising at least one through-substrate via filled with conductive materials
AssigneeMicron Technology, Inc.
InventorsMark A. Bossler, Jaspreet S. Gandhi, Christopher J. Gambee, Randall S. Parker
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Abstract
A method for selectively removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a semiconductor structure comprising a substrate and at least one copper feature and removing a portion of the substrate using an etchant comprising SF6 without forming copper sulfide on the at least one copper feature. Additional methods are also disclosed, as well as semiconductor structures produced from such methods.
Claims20
A semiconductor structure, comprising:
- a first substrate comprising first copper features therein, upper ends of the first copper features protruding above a top surface of the first substrate, lower ends of the first copper features coplanar with a bottom surface of the first substrate;
- and
- a second substrate stacked on the first substrate, the second substrate comprising second copper features therein, upper ends of the second copper features protruding above a top surface of the second substrate, lower ends of the second copper features coplanar with a bottom surface of the second substrate,
- wherein each of the first copper features of the first substrate protrudes above the top surface of the first substrate substantially the same distance, and
- wherein the protruding upper ends of the first copper features of the first substrate are connected to the lower coplanar ends of the second copper features of the second substrate.
A semiconductor structure, comprising:
- a first structure comprising a first substrate, at least one first through-substrate via filled with a first conductive material, and an insulating material and a diffusion barrier material over sidewalls of the at least one first through-substrate via, the at least one first through-substrate via comprising a first end protruding above a top surface of the first substrate and a second end coplanar with a bottom surface of the first substrate;
- and
- a second structure comprising a second substrate, at least one second through-substrate via filled with a second conductive material, the at least one second through-substrate via comprising an end coplanar with a surface of the second substrate, the coplanar end of the at least one second through-substrate via connecting to the protruding first end of the at least one first through-substrate via.
A semiconductor structure, comprising:
- a first structure comprising a first substrate and at least one first conductive through-substrate via, one end of the at least one first conductive through-substrate via protruding above a top surface of the first substrate and defining at least one contact of the first structure;
- a second structure comprising a second substrate and at least one second conductive through-substrate via, the at least one second conductive through-substrate via comprising one end protruding above a top surface of the second substrate and another end coplanar with a bottom surface of the second substrate, the coplanar end of the at least one second conductive through-substrate via defining at least one contact of the second structure;
- a passivation material on the bottom surface of the second substrate;
- and
- a conductive material connecting the at least one contact of the first structure to the at least one contact of the second structure.
Dependencies are inferred from the claim text.