Moisture scavenging layer for thinner barrier application in beol integration
AssigneeGlobalfoundries Inc.
InventorsMing He, Kunaljeet Tanwar
Life of this patent
Estimating the term…
Abstract
A method of forming a thinner barrier/liner stack for vias and metal lines and the resulting device are disclosed. Embodiments include forming a via through an interlayer dielectric (ILD) and capping layer, down to a first metal layer; forming a moisture scavenging layer precursor over the ILD and on side and bottom surfaces of the via; annealing the moisture scavenging layer precursor, forming a moisture scavenging layer; forming a barrier/liner stack over the moisture scavenging layer; and depositing a second metal layer over the barrier/liner stack and filling the via and trench.
Claims20
A method comprising:
- forming a via through an interlayer dielectric (ILD) and capping layer, down to a first metal layer;
- forming a moisture scavenging layer precursor over the ILD and on side and bottom surfaces of the via and trench;
- annealing the moisture scavenging layer precursor, forming a moisture scavenging layer;
- forming a barrier/liner stack over the moisture scavenging layer;
- and
- depositing a second metal layer over the barrier/liner stack and filling the via and trench.
A device comprising:
- a first metal layer;
- a capping layer over the first metal layer;
- an interlayer dielectric (ILD) over the capping layer;
- a trench and a via formed through the ILD and the capping layer, down to the first metal layer;
- a moisture scavenging layer over the ILD and on side and bottom surfaces of the trench and the via;
- a barrier/liner stack over the moisture scavenging layer;
- and
- a second metal layer over the barrier/liner stack and filling the via and trench.
A method comprising:
- forming a via through an ultra-low-k (ULK) interlayer dielectric (ILD) and capping layer, down to a first metal layer;
- forming a manganese (Mn) layer to a thickness of 5 to 20 angstroms (Å) over the ILD and on side and bottom surfaces of the via;
- annealing the Mn layer, forming a MnOx layer;
- forming a barrier/liner stack of tantalum nitride (TaN) and tantalum (Ta), cobalt (Co), or ruthenium (Ru) to a thickness of 10 to 80 Å on the side and bottom surfaces of the via over the MnOx layer;
- depositing a copper (Cu) layer over the barrier/liner stack and filling the via and trench;
- performing chemical mechanical polishing (CMP);
- and
- forming a second capping layer over the copper layer.
Dependencies are inferred from the claim text.