Copper based nitride liner passivation layers for conductive copper structures

A device, comprising

• a layer of insulating material;
• a copper-based conductive structure positioned in a trench/via within said layer of insulating material;
• a barrier layer positioned in said trench/via;
• a copper-based silicon or germanium nitride layer positioned between said copper-based conductive structure and said barrier layer, said copper-based silicon or germanium nitride layer contacting said copper-based conductive structure;
• and
• a copper seed layer positioned between said barrier layer and said copper-based silicon or germanium nitride layer.

A device, comprising

• a layer of insulating material;
• a copper-based conductive structure positioned in a trench/via within said layer of insulating material;
• a barrier layer positioned in said trench/via;
• and
• a layer of copper germanium nitride (CuxGeNy) positioned between said copper-based conductive structure and said barrier layer, wherein said layer of copper germanium nitride (CuxGeNy) is in physical contact with both said barrier layer and said copper-based conductive structure.

A device, comprising

• a layer of insulating material;
• a copper-based conductive structure positioned in a trench/via within said layer of insulating material;
• a barrier layer positioned in said trench/via;
• a copper seed layer positioned on and in physical contact with said barrier layer;
• and
• a layer of copper germanium nitride (CuxGeNy) positioned between said copper-based conductive structure and said copper seed layer, wherein said layer of copper germanium nitride (CuxGeNy) is in physical contact with both said copper seed layer and said copper-based conductive structure.