Semiconductor device
AssigneeRensas Electronics Corporation
InventorsKoujirou Matsui, Takehiko Sakamoto, Kazuyuki Umezu, Tomoaki Uno
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Abstract
A plurality of unit MISFET elements connected in parallel with each other to make up a power MISFET are formed in an LDMOSFET forming region on a main surface of a semiconductor substrate. A control circuit that controls a gate voltage of the power MISFET is formed in a driver circuit region on the main surface of the semiconductor substrate. A wiring structure having a plurality of wiring layers made of the same metal material is formed on the semiconductor substrate. The gate electrodes of the plurality of unit MISFET elements formed in the LDMOSFET forming region are electrically connected to each other via gate wirings formed in all of the plurality of wiring layers made of the same metal material.
Claims15
A semiconductor device comprising:
- a semiconductor substrate;
- a plurality of unit MISFET elements formed in a first MISFET forming region on a main surface of the semiconductor substrate and connected in parallel with each other to make up a power MISFET;
- a control circuit formed in a first control circuit forming region on the main surface of the semiconductor substrate and controlling a gate voltage of the power MISFET;
- and
- a wiring structure formed on the semiconductor substrate and having a plurality of wiring layers made of the same metal material,
- wherein gate electrodes of the plurality of unit MISFET elements formed in the first MISFET forming region are electrically connected to each other via gate wirings which are respectively formed in all of the plurality of wiring layers.
Dependencies are inferred from the claim text.