Semiconductor device and method of manufacturing the same
AssigneesFujitsu Limited, Fujitsu Ten Limited
InventorsMotoaki Tani, Shinya Iijima, Shinichi Sugiura, Hiromichi Watanabe
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Abstract
A semiconductor device includes a first bump that is located over a surface of a semiconductor element, and is formed on a first bump formation face distanced from a back surface of the semiconductor element at a first distance, and a second bump that is located over the surface of the semiconductor element, and is formed on a second bump formation face distanced from the back surface of the semiconductor element at a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump.
Claims10
A semiconductor device comprising:
- a semiconductor element;
- a first bump formed on a first bump formation face located at a front surface side of the semiconductor element, a distance between the first bump formation face and a back surface opposite to a front surface of the semiconductor element being a first distance;
- and
- a second bump formed on a second bump formation face located at the front surface side of the semiconductor element, a distance between the second bump formation face and the back surface opposite to a front surface of the semiconductor element being a second distance being longer than the first distance, the second bump having a diameter larger than a diameter of the first bump,
- wherein the first and second bumps are plating bumps formed entirely with planting of a same metal.
Dependencies are inferred from the claim text.