Back to results
US 9,318,415 B2Granted
Beol structures incorporating active devices and mechanical strength
AssigneeGlobalfoundries Inc.
InventorsStephen M Gates, Daniel C. Edelstein, Satyanarayana V. Nitta
Life of this patent
Estimating the term…
Abstract
An integrated circuit and method includes a substrate, a plurality of semiconductor device layers monolithically integrated on the substrate, and a metal wiring layer with vias interconnecting the plurality of semiconductor device layers. The semiconductor device layers are devoid of bonding or joining interface with the substrate.
Claims20
A circuit, comprising:
- a substrate;
- a plurality of semiconductor device layers monolithically formed on the substrate;
- and
- a wiring layer with vias interconnecting the plurality of semiconductor device layers.
1 more element
A circuit, comprising:
- a substrate comprising a first semiconductor layer;
- a first wiring layer formed on the substrate;
- a first dielectric layer, including the first wiring layer, formed on the substrate;
- and
- a second semiconductor layer comprising an active device formed on the first dielectric layer and monolithically integrated with the substrate.
2 more elements
Dependencies are inferred from the claim text.