Integrated circuit structure with through-semiconductor via
AssigneeGlobalfoundries Inc.
InventorsFen Chen, Minhua Lu, Timothy D. Sullivan, Ping-Chuan Wang, Lijuan Zhang
Life of this patent
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Abstract
The present disclosure generally provides for integrated circuit (IC) structures with through-semiconductor vias (TSV). In an embodiment, an IC structure may include a through-semiconductor via (TSV) embedded in a substrate, the TSV having a cap; a dielectric layer adjacent to the substrate; a metal layer adjacent to the dielectric layer; a plurality of vias each embedded within the dielectric layer and coupling the metal layer to the cap of the TSV at respective contact points, wherein the plurality of vias is configured to create a substantially uniform current density throughout the TSV.
Claims20
An integrated circuit (IC) structure comprising:
- a through-semiconductor via (TSV) embedded in a substrate;
- a dielectric layer adjacent to the substrate;
- a metal layer adjacent to the dielectric layer;
- a plurality of vias each embedded within the dielectric layer and coupling the metal layer to the TSV at respective contact points, wherein the plurality of vias includes a first via and a second via therein, the first via having one of a different material composition or a different cross-sectional area relative to the second via, and wherein the plurality of vias is configured to create a substantially uniform current density throughout the TSV.
An integrated circuit (IC) structure comprising:
- a through-semiconductor via (TSV) embedded in a substrate;
- a dielectric layer adjacent to the substrate;
- a first via embedded in the dielectric layer and coupling the TSV to a first metal layer;
- and
- a second via embedded in the dielectric layer and coupling the TSV to a second metal layer and having one of a different material composition or a different cross-sectional area relative to the first via, the second metal layer being distinct and vertically separated from the first metal layer, wherein a current within the first metal layer is different from a current within the second metal layer, and wherein the first via and the second via are configured to create a substantially uniform current density throughout the TSV.
An integrated circuit (IC) structure comprising:
- a through-semiconductor via (TSV) having a center axis and an end;
- a cap contacting the end of the TSV and substantially aligned with the center axis of the TSV;
- a dielectric layer adjacent to the TSV;
- a metal wire adjacent to the dielectric layer;
- a first via embedded in the dielectric layer and electrically coupling the metal wire to the cap, wherein a centroid of the first via is substantially aligned with the center axis of the TSV;
- and
- a plurality of second vias embedded within the dielectric layer and coupling the metal layer to the TSV at respective contact points, wherein the first via and the plurality of second vias are configured to create a substantially uniform current density throughout the TSV, and wherein the first via includes one of a different material composition or a different cross-sectional area relative to the plurality of second vias.
Dependencies are inferred from the claim text.