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US 9,318,413 B2Granted
Integrated circuit structure with metal cap and methods of fabrication
AssigneeGlobalfoundries Inc.
InventorsFen Chen, Andrew T. Kim, Minhua Lu, Timothy D. Sullivan, Ping-Chuan Wang, Lijuan Zhang
Life of this patent
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Abstract
The present disclosure generally provides for an integrated circuit (IC) structure with a TSV, and methods of manufacturing the IC structure and the TSV. An IC structure according to embodiments of the present invention may include a through-semiconductor via (TSV) embedded within a substrate, the TSV having an axial end; and a metal cap contacting the axial end of the TSV, wherein the metal cap has a greater electrical resistivity than the TSV.
Claims19
An integrated circuit (IC) structure comprising:
- a through-semiconductor via (TSV) embedded within a substrate, the TSV having an axial end;
- a dielectric layer adjacent to the substrate;
- a liner contacting the TSV and positioned about the TSV;
- a metal cap contacting the axial end of the TSV, wherein the metal cap has a greater electrical resistivity than the TSV;
- a metal layer embedded in the dielectric layer and in contact with the metal cap and the liner, wherein the metal layer has a lower electrical resistivity than the metal cap, and wherein an interface between the metal layer, the liner, and the metal cap forms an elbow junction;
- a first via extending from an axial end of the metal layer to the axial end of the TSV, wherein the first via forms an electrical connection between the metal layer and the TSV through the metal cap;
- and
- a second via extending from the axial end of the metal layer to the metal cap such that a portion of the metal cap separates the second via from the TSV, wherein the second via is laterally interposed between the elbow junction and the first via.
5 more elements
A method of fabricating a through-semiconductor via (TSV), the method comprising:
- forming a TSV structure in a substrate, the TSV structure having an exposed first axial end and a liner region positioned about a conductive region of the TSV;
- forming a metal cap on the exposed first axial end of the TSV structure, wherein the metal cap has a greater electrical resistivity than the TSV structure and wherein an upper surface of the metal cap is substantially coplanar with an upper surface of the liner region of the TSV structure;
- forming a dielectric layer on the substrate;
- removing a first portion of the dielectric layer to expose the TSV structure;
- removing a second portion of the dielectric layer to expose the metal cap;
- forming a plurality of vias within the dielectric layer, the plurality of vias including a first via in contact with the TSV structure and a second via in contact with the metal cap, such that a portion of the metal cap separates the second via from the TSV structure;
- and
- forming a metal layer over the metal cap and the liner region of the TSV structure to form an elbow junction between the metal layer and the TSV structure along the upper surfaces of the liner and the metal cap, wherein the metal layer has a lower electrical resistivity than the metal cap, and wherein the second via is laterally interposed between the elbow junction and the first via.
5 more elements
A method of fabricating a through-semiconductor via (TSV), the method comprising:
- forming a sacrificial collar about an axial end of a TSV structure;
- removing the sacrificial collar;
- and
- forming a metal cap on the axial end of the TSV structure, wherein a portion of the metal cap is located about the axial end of the TSV structure, and wherein a liner region of the TSV structure is positioned about the metal cap;
- forming a dielectric layer on at least the metal cap and the TSV structure;
- removing a first portion of the dielectric layer to expose the TSV structure;
- removing a second portion of the dielectric layer to expose the metal cap;
- forming a plurality of vias within the dielectric layer, the plurality of vias including a first via in contact with the TSV structure and a second via in contact with the metal cap, such that a portion of the metal cap separates the second via from the TSV structure;
- and
- forming a metal layer over the metal cap and the liner region of the TSV structure to form an elbow junction between the metal layer and the TSV structure along the upper surfaces of the liner and the metal cap, wherein the metal layer has a lower electrical resistivity than the metal cap, and wherein the second via is laterally interposed between the elbow junction and the first via.
7 more elements
Dependencies are inferred from the claim text.