Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device

A method of manufacturing a semiconductor device comprising, in the following order:

• a first step of preparing a silicon-made semiconductor element having a pn junction exposure portion where a pn junction is exposed;
• and
• a second step of forming a glass layer by forming a layer made of a glass composition for protecting a semiconductor junction such that the layer covers the pn junction exposure portion and by baking the layer made of the glass composition for protecting a semiconductor junction, wherein
• in the second step, the glass layer is formed using the glass composition for protecting a semiconductor junction which is made of fine glass particles prepared from a material in a molten state obtained by melting a glass material which contains at least SiO2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein the glass composition further contains nickel oxide, the content of SiO2 falls within a range of 49.5 mol % to 64.3 mol %, the content of B2O3 falls within a range of 8.4 mol % to 17.9 mol %, the content of Al2O3 falls within a range of 3.7 mol % to 14.8 mol %, the content of ZnO falls within a range of 3.9 mol % to 14.2 mol %, and the content of the oxide of alkaline earth metal falls within a range of 7.4 mol % to 12.9 mol %, and an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10−6 to 4.13×10−6.

A semiconductor device comprising:

• a silicon-made semiconductor element having a pn junction exposure portion where a pn junction is exposed;
• and
• a glass layer which is formed by forming a layer made of a glass composition for protecting a semiconductor junction such that the layer covers the pn junction exposure portion and by baking the layer made of the glass composition for protecting a semiconductor junction, wherein
• the glass layer is formed using the glass composition for protecting a semiconductor junction which is made of fine glass particles prepared from a material in a molten state obtained by melting a glass material which contains at least SiO2, B2O3, Al2O3, ZnO and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, wherein the glass composition further contains nickel oxide, the content of SiO2 falls within a range of 49.5 mol % to 64.3 mol %, the content of B2O3 falls within a range of 8.4 mol % to 17.9 mol %, the content of Al2O3 falls within a range of 3.7 mol % to 14.8 mol %, the content of ZnO falls within a range of 3.9 mol % to 14.2 mol %, and the content of the oxide of alkaline earth metal falls within a range of 7.4 mol % to 12.9 mol %, and an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10−6 to 4.13×10−6.