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US 9,318,383 B2Granted
Integrated cluster to enable next generation interconnect
AssigneeApplied Materials, Inc.
InventorsMehul B. Naik, Abhijit Basu Mallick, Kiran V. Thadani, Zhenjiang Cui
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Abstract
Embodiments of the present invention generally relate to methods for forming a metal structure and passivation layers. In one embodiment, metal columns are formed on a substrate. The metal columns are doped with manganese, aluminum, zirconium, or hafnium. A dielectric material is deposited over and between the metal columns and then cured to form a passivation layer on vertical surfaces of the metal columns.
Claims17
A method for forming passivation layers, comprising:
- forming metal columns over a substrate;
- depositing a conformal layer on vertical surfaces of the metal columns;
- depositing a dielectric material between and over the metal columns and the conformal layer;
- and
- curing the dielectric material to form a passivation layer on the vertical surfaces of the metal columns.
2 more elements
Dependencies are inferred from the claim text.