Method of fabricating conductive line of a semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsMu-Chin Chen, Yuan-Sheng Chiang, Chi-Sheng Hsiung
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Abstract
A method of fabricating a conductive line of a semiconductor device is disclosed. The method includes the steps of: sequentially forming a conductive material layer and a mask on a semiconductor substrate, wherein a thickness of the conductive material layer is between 30000 angstroms (Å) and 90000 angstrom (Å); performing a first etching process to remove a part of the conductive material layer to form at least an upper side; and performing a second etching process to remove a part of the conductive material layer to form at least a lower side, wherein a curvature of the upper side is different from a curvature of the lower side.
Claims11
A method of fabricating a conductive line of a semiconductor device, comprising:
- sequentially forming a conductive material layer and a mask on a semiconductor substrate, wherein a thickness of the conductive material layer is between 30000 angstroms (Å) and 90000 angstrom (Å);
- performing a first etching process to remove a part of the conductive material layer to form at least an upper side;
- and
- performing a second etching process to remove a part of the conductive material layer to format least a lower side, wherein a curvature of the upper side is different from a curvature of the lower side.
Dependencies are inferred from the claim text.