US 9,318,380 B2 · Semiconductor device and method of forming stacked semiconductor die and conductive interconnect structure through an encapsulant

Abstract

A semiconductor device has a first conductive layer formed over a first substrate. A second conductive layer is formed over a second substrate. A first semiconductor die is mounted to the first substrate and electrically connected to the first conductive layer. A second semiconductor die is mounted to the second substrate and electrically connected to the second conductive layer. The first semiconductor die is mounted over the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and the first and second substrates. A conductive interconnect structure is formed through the encapsulant to electrically connect the first and second semiconductor die to the second surface of the semiconductor device. Forming the conductive interconnect structure includes forming a plurality of conductive vias through the encapsulant and the first substrate outside a footprint of the first and second semiconductor die.

Claims23

Dependent claims

A method of making a semiconductor device, the method comprising:

providing a first substrate;
disposing a first semiconductor die over the first substrate;
disposing a second semiconductor die over the first semiconductor die;
depositing an encapsulant around the first semiconductor die and the second semiconductor die;
and
forming an interconnect structure extending from a first surface of the encapsulant to a second surface of the encapsulant opposite the first surface of the encapsulant.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of forming stacked semiconductor die and conductive interconnect structure through an encapsulant

Life of this patent

Semiconductor device and method of forming stacked semiconductor die and conductive interconnect structure through an encapsulant

Life of this patent

Abstract

Claims23