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US 9,318,379 B2Granted
Methods of manufacturing semiconductor devices including air gap spacers
AssigneeSamsung Electronics Co., Ltd.
InventorsEun-Ok Lee, Nam-Gun Kim, Gyuhwan Oh, Heesook Park, Hyun-Jung Lee, Kyungho Jang
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Abstract
A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.
Claims14
A method of manufacturing a semiconductor device, the method comprising:
- forming line patterns on a substrate;
- forming a sacrificial spacer and a first spacer that sequentially are on a sidewall of each of the line patterns;
- forming a poly-silicon layer in a space between line patterns;
- performing a first etching process on the poly-silicon layer to form a first-etched poly-silicon layer in the space between the line patterns and to expose a first portion of the first spacer, the first spacer further including a second portion not exposed under the first portion;
- performing a second etching process on the first-etched poly-silicon layer to form a poly-silicon pattern between the line patterns;
- and
- forming a metal silicide layer on a top surface of the poly-silicon pattern,
- wherein the metal silicide layer is formed to be spaced apart from an interface between the first portion and the second portion of the first spacer.
5 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a region on a substrate, the region including a sidewall;
- forming a first spacer extending on the sidewall, the first spacer including a sacrificial layer having a first end adjacent the substrate and a second end remote from the substrate;
- forming a contact on the first spacer, the contact having a first end adjacent the substrate and a second end that is between the first and second ends of the first spacer;
- forming a second spacer extending on the first spacer, the second spacer having a second end that is adjacent the second end of the first spacer and a first end that is adjacent the second end of the contact;
- recessing the second end of the contact so that it is spaced farther apart from the first end of the second spacer;
- and
- removing the sacrificial layer to create an air gap in the first spacer, the air gap having a first end adjacent the substrate and a second end remote from the substrate.
4 more elements
Dependencies are inferred from the claim text.