Patterns of a semiconductor device and method of manufacturing the same

A method of forming patterns of a semiconductor device, comprising:

• partially etching a substrate to form a plurality of trenches thereon;
• forming a plurality of preliminary first isolation layer patterns in the trenches;
• partially etching the substrate and the preliminary first isolation layer patterns to form a plurality of active patterns and a plurality of first isolation layer patterns, respectively, such that the first isolation layer patterns have top surfaces substantially coplanar with top surfaces of the active patterns, the active patterns arranged both in a first direction and in a second direction and having a length in the first direction, and the first isolation layer patterns formed between the active patterns in the first direction and supporting the active patterns;
• and
• forming a plurality of second isolation layer patterns filling spaces between the active patterns and the first isolation layer patterns.

A semiconductor device, comprising:

• a plurality of active patterns protruding from a substrate, each of the active patterns extending along a first direction;
• a plurality of first isolation layer patterns filling first spaces, the first spaces between respective neighboring active patterns and in a second direction, the first isolation layer patterns supporting two opposing sidewalls of the respective neighboring active patterns, the first isolation layer patterns having top surfaces substantially coplanar with top surfaces of the active patterns;
• and
• a plurality of second isolation layer patterns filling second spaces and third spaces, the second spaces between the active patterns and in the second direction, the third spaces defined by upper and lower portions of the first isolation layer patterns.