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US 9,318,366 B2Granted
Method of forming integrated circuit having modified isolation structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien-Chih Chou, Kong-Beng Thei
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Abstract
A method includes forming an isolation structure partially buried in a substrate. A portion of the isolation structure protrudes from an upper surface of the substrate. The isolation structure is partially removed, thereby forming a modified isolation structure. An upper surface of the modified isolation structure is lower than the upper surface of the substrate. A gate dielectric structure is formed to be partially on the substrate and partially on the upper surface of the modified isolation structure.
Claims20
A method, comprising:
- forming an isolation structure partially buried in a well of a substrate, a portion of the isolation structure protruding from a top surface of the substrate and a top surface of the well, wherein the top surface of the well is level with the top surface of the substrate;
- partially removing the isolation structure, thereby forming a modified isolation structure, an upper surface of the modified isolation structure being lower than the top surface of the substrate;
- and
- forming a gate dielectric structure partially on the substrate and partially on the upper surface of the modified isolation structure.
1 more element
A method, comprising:
- forming a first isolation structure partially buried in a first well of a substrate, the first well having a first doping type, and an upper portion of the first isolation structure protruding from an upper surface of the substrate;
- partially removing the first isolation structure, thereby forming a modified isolation structure, an upper surface of the modified isolation structure being lower than the upper surface of the substrate;
- and
- forming a gate dielectric structure partially on a second well of the substrate, partially on the first well of the substrate, and partially on the upper surface of the modified isolation structure, the second well having a second doping type.
1 more element
A method, comprising:
- forming an isolation structure partially buried in a first well of a substrate, the first well having a first doping type, and an upper portion of the first isolation structure protruding from an upper surface of the substrate;
- partially removing the first isolation structure, thereby forming a modified isolation structure, an upper surface of the modified isolation structure being lower than the upper surface of the substrate;
- forming a gate dielectric structure partially on a second well of the substrate, partially on the first well of the substrate, and partially on the upper surface of the modified isolation structure, the second well having a second doping type;
- and
- forming a gate electrode structure over the gate dielectric structure, an upper surface of the gate electrode structure having a first portion directly over the modified isolation structure and a second portion directly over the second well, and the first portion of the upper surface of the gate electrode structure being level with or lower than the second portion of the upper surface of the gate electrode structure.
2 more elements
Dependencies are inferred from the claim text.