Power semiconductor device with a double metal contact

A power semiconductor device comprising:

• a semiconductor body including an active region having source regions and gate electrodes;
• a first metal layer over said semiconductor body and coupled to said source regions;
• a gate bus over said semiconductor body lateral to and spaced from said first metal layer, said gate bus including a metallic gate bus over a polysilicon gate bus and an insulation body between said polysilicon gate bus and said semiconductor body, wherein said gate bus is not disposed within a trench;
• a buffer body over said gate bus and between said gate bus and said first metal layer;
• a second metal layer over said first metal layer and extending over and covering said buffer body, a portion of said second metal layer forming a gate pad disposed over said active region.