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US 9,318,339 B2Granted
Polishing slurry and polishing method
AssigneeMitsui Mining & Smelting Co., Ltd.
InventorsRyuichi Sato, Yohei Maruyama, Atsushi Koike
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AssigneeMitsui Mining & Smelting Co., Ltd.
InventorsRyuichi Sato, Yohei Maruyama, Atsushi Koike
Estimating the term…
The present invention provides a polishing slurry capable of polishing even high-hardness materials such as silicon carbide and gallium nitride at a high polishing speed. The present invention is a polishing slurry including a slurry containing a manganese oxide particle and a manganate ion for polishing high-hardness materials having a Mohs hardness of 8 or higher. In the present invention, the manganese oxide particle in the slurry is preferably 1.0 mass % or more; the manganese oxide is preferably manganese dioxide; and the manganate ion is preferably permanganate ion. The polishing slurry according to the present invention enables even high-hardness hardly-machinable materials such as silicon carbide and gallium nitride to be polished smoothly at a high speed.
A polishing slurry comprising a slurry comprising a manganese oxide particle comprised of manganese dioxide and a manganate ion, wherein the manganate ion in the slurry is present in an amount of 0.1 mass % or more and 4.0 mass % or less, and wherein a molar concentration ratio of the manganate ion to the manganese oxide is 0.2 or higher and 1.5 or lower, and wherein the slurry has a pH of 7 to 10.
Dependencies are inferred from the claim text.