Non-volatile memory structure employing high-k gate dielectric and metal gate

A semiconductor structure comprising a field effect transistor, said field effect transistor including:

• a tunnel dielectric comprising a first dielectric material having a dielectric constant greater than 8.0 and located on a semiconductor substrate;
• a floating gate electrode structure comprising at least a conductive material portion contacting said tunnel dielectric;
• a control gate dielectric located on said floating gate electrode structure and comprising a second dielectric material, wherein a vertical surface of said control gate dielectric is in physical contact with an edge of an interface between said conductive material portion and said tunnel dielectric;
• a control gate electrode structure located on said control gate dielectric, wherein a horizontal surface of said control gate dielectric is in contact with a top surface of said floating gate electrode, and a topmost surface of said control gate dielectric underlies, or is in physical contact with, a bottom surface of said control gate electrode;
• and
• another field effect transistor, said another field effect transistor including:
• a gate dielectric comprising at least a portion including said first dielectric material;
• and
• a gate electrode structure contacting said gate dielectric and comprising at least a first metallic material portion and a second metallic material portion, wherein said first metallic material portion has a same composition and thickness as said conductive material portion, and said second metallic material portion having a same material as a component of said control gate electrode structure.