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US 9,318,326 B2Granted
Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
AssigneePilegrowth Tech S.R.L.
InventorsHans Von Kanel, Leonida Miglio
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Abstract
Structures and methods for producing active layer stacks of lattice matched, lattice mismatched and thermally mismatched semiconductor materials, with low threading dislocation densities, no layer cracking and minimized wafer bowing, by using epitaxial growth onto elevated substrate regions in a mask-less process.
Claims56
A structure comprising:
- a patterned crystalline semiconductor substrate with elevated regions bounded by trenches, wherein the depth of the trenches h is larger than their width d;
- and
- epitaxial semiconductor material deposited on said elevated substrate regions in the form of isolated, semiconductor patches on top of said elevated regions;
- wherein the patterned semiconductor substrate is made of a homogeneous first crystalline semiconductor material;
- wherein the epitaxial semiconductor material comprises at least one second crystalline semiconductor material having a lattice mismatch to said substrate;
- wherein said patches have a lower portion, in a proximal position with respect to said elevated regions, and upper portion, in a distal position with respect to said elevated regions;
- wherein the width of the lower portion of said patches progressively increases moving away from said elevated regions;
- wherein the upper portion of said patches has sidewalls vertical with respect to said substrate;
- wherein the vertical sidewalls of adjacent patches are spaced;
- wherein the spacing between the vertical sidewalls of adjacent patches is smaller than the width of said trenches.
7 more elements
Dependencies are inferred from the claim text.