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US 9,318,325 B2Granted
Defect reduction using aspect ratio trapping
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJie Bai, Anthony J. Lochtefeld, Ji-Soo Park
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Abstract
Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
Claims20
A method comprising:
- defining an opening having a dielectric sidewall to a first crystalline semiconductor material of a substrate, the substrate having a top surface;
- and
- epitaxially growing a second crystalline semiconductor material in the opening, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, a dislocation in the second crystalline semiconductor material arising from the lattice mismatch, the epitaxially growing the second crystalline semiconductor material comprising inducing a facet in the second crystalline semiconductor material, the facet being non-parallel to the top surface of the substrate, the dislocation being directed to the dielectric sidewall in a direction within 10° of perpendicular to the facet.
A method comprising:
- forming a dielectric sidewall on a substrate, the substrate comprising a first crystalline semiconductor material and having a top surface;
- and
- epitaxially growing a second crystalline semiconductor material on the substrate and adjoining the dielectric sidewall, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, a dislocation in the second crystalline semiconductor material arising from the lattice mismatch, the epitaxially growing the second crystalline semiconductor material comprising forming a growth front of the second crystalline semiconductor material that is non-parallel to the top surface of the substrate, the dislocation being directed to the dielectric sidewall in a direction within 10° of perpendicular to the growth front, the dislocation terminating at the dielectric sidewall in the direction.
A method comprising:
- etching a first crystalline semiconductor material of a substrate to expose a crystallographic plane of the first crystalline semiconductor material that is non-parallel to a top surface of the substrate;
- defining a dielectric sidewall adjoining the crystallographic plane, the dielectric sidewall and the crystallographic plane defining a first angle less than 90°;
- and
- epitaxially growing a second crystalline semiconductor material from the crystallographic plane, the second crystalline semiconductor material being lattice mismatched to the first crystalline semiconductor material, a dislocation in the second crystalline semiconductor material arising from the lattice mismatch, the epitaxially growing the second crystalline semiconductor material comprising forming a growth front of the second crystalline semiconductor material, the growth front and the dielectric sidewall defining a second angle, the second angle being approximately equal to the first angle, the dislocation being directed to the dielectric sidewall in a direction within 10° of perpendicular to the growth front.
1 more element
Dependencies are inferred from the claim text.