Manufacturing method of SiC epitaxial substrate, manufacturing method of semiconductor device, and semiconductor device

A manufacturing method of a semiconductor device comprising:

• performing a first process and a second process alternately to form an n type SiC layer,
• the first process forming a first SiC layer with an epitaxial growth process by using a first source gas containing an n type impurity, and
• the second process forming a second SiC layer with an epitaxial growth process by using a second source gas containing the n type impurity, the second source gas having a higher atomic ratio between C (carbon) and Si (silicon) (C/Si) than that of the first source gas, a thickness of the second SiC layer being smaller than a thickness of the first SiC layer.

A semiconductor device manufactured by performing a first process and a second process alternately to form an n type SiC layer,

• the first process forming a first SiC layer with an epitaxial growth process by using a first source gas containing an n type impurity, and
• the second process forming a second SiC layer with an epitaxial growth process by using a second source gas containing the n type impurity, the second source gas having a higher atomic ratio between C (carbon) and Si (silicon) (C/Si) than that of the first source gas, a thickness of the second SiC layer being smaller than that of a thickness of the first SiC layer.