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US 9,318,323 B2Granted
Semiconductor devices with graphene nanoribbons
AssigneeGlobalfoundries Inc.
InventorsEmre Alptekin, Viraj Y. Sardesai, Reinaldo A. Vega
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Abstract
Semiconductor devices with graphene nanoribbons and methods of manufacture are disclosed. The method includes forming at least one layer of Si material on a substrate. The method further includes forming at least one layer of carbon based material adjacent to the at least one layer of Si. The method further includes patterning at least one of the at least one layer of Si material and the at least one layer of carbon based material. The method further includes forming graphene on the patterned carbon based material.
Claims19
A method, comprising:
- forming at least one layer of Si material on a substrate;
- forming at least one layer of carbon based material adjacent to the at least one layer of Si;
- patterning at least one of the at least one layer of Si material and the at least one layer of carbon based material to form at least one vertical stack of alternating Si and carbon based material;
- and
- forming graphene on the patterned carbon based material.
2 more elements
A method, comprising:
- forming at least one layer of Si material on a substrate;
- forming at least one layer of carbon based material adjacent to the at least one layer of Si;
- patterning at least one of the at least one layer of Si material and the at least one layer of carbon based material;
- and
- forming graphene on the patterned carbon based material,
- wherein:
- the carbon based material is SiC material;
- the patterning comprises forming trenches within the at least one layer of Si material;
- and
- the method further comprises:
- depositing the SiC material within the trenches, thereby forming alternate layers of SiC material and Si material.
8 more elements
A method, comprising:
- forming alternating layers of Si material and SiC material over a substrate;
- patterning the alternating layers of Si material and SiC material into one or more fin stacks;
- and
- forming graphene nanoribbons about the SiC material of the fin stacks by annealing at a predetermined annealing temperature and time, wherein:
- the alternating layers of Si material and SiC material comprise plural layers of the Si material and plural layers of the SiC material;
- the patterning comprises etching the plural layers of the Si material and the plural layers of the SiC material;
- and
- the patterning forms trenches in the plural layers of the Si material and the plural layers of the SiC material, such that adjacent ones of the fin stacks are separated by one of the trenches.
5 more elements
Dependencies are inferred from the claim text.