FinFET design controlling channel thickness
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhiqiang Wu, Ken-Ichi Goto, Wen-Hsing Hsieh, Jon-Hsu Ho, Chih-Ching Wang, Ching-Fang Huang
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Abstract
System and method for controlling the channel thickness and preventing variations due to formation of small features. An embodiment comprises a fin raised above the substrate and a capping layer is formed over the fin. The channel carriers are repelled from the heavily doped fin and confined within the capping layer. This forms a thin-channel that allows greater electrostatic control of the gate.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a semiconductor fin on a top surface of a substrate;
- forming a diffusion barrier layer on a top surface and sidewalls of the semiconductor fin, the diffusion barrier layer comprising a carbon-containing material;
- and
- forming a capping layer on a top surface and sidewalls of the diffusion barrier layer, the capping layer having a band gap less than a band gap of the semiconductor fin, the diffusion barrier layer having a material composition different than material compositions of both the semiconductor fin and the capping layer.
A method of forming a fin field-effect transistor (FinFET), the method comprising:
- forming a fin raised above a substrate, the forming the fin further comprising:
- forming an inner section of the fin having a first band gap;
- forming a middle section of the fin on the inner section of the fin, the middle section having a second band gap, the second band gap being greater than the first band gap;
- and
- forming an outer section of the fin on the middle section of the fin, the outer section having a third band gap, the third band gap being less than the first band gap.
A method comprising:
- forming a fin above a substrate, the fin being doped to a first concentration;
- epitaxially growing a diffusion barrier layer on a top surface and sidewalls of the fin, the diffusion barrier layer having a band gap greater than a band gap of the fin;
- and
- epitaxially growing a capping layer on a top surface and sidewalls of the diffusion barrier layer, the capping layer being doped to a second concentration, the second concentration being less than the first concentration.
Dependencies are inferred from the claim text.