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US 9,318,321 B2Granted
Methods of fabricating memory devices having charged species
AssigneeMicron Technology, Inc.
InventorRoy Meade
Life of this patent
Estimating the term…
Abstract
Methods for fabricating memory devices having charged species. In one such method, a dielectric material is formed adjacent to a semiconductor. A charged species is introduced into the dielectric material, wherein the charged species has an energy barrier in a range of greater than about 0.5 eV to about 3.0 eV. A control gate is formed adjacent to the dielectric material.
Claims20
A method for fabricating memory device, the method comprising:
- forming a dielectric material adjacent to a semiconductor;
- introducing a charged species into the dielectric material wherein the charged species has an activation energy of diffusion within the dielectric material in a range of greater than about 0.5 eV to about 3.0 eV;
- and
- forming a control gate adjacent to the dielectric material.
1 more element
A method for fabricating memory device, the method comprising:
- forming a dielectric material adjacent to a semiconductor;
- introducing a non-hydrogenous ion into the dielectric material wherein the non-hydrogenous ion has an activation energy of diffusion within the dielectric material in a range of greater than about 0.5 eV to about 3.0 eV;
- and
- forming a control gate adjacent to the dielectric material.
1 more element
A method for fabricating memory device, the method comprising:
- forming a dielectric material adjacent to a semiconductor;
- introducing a non-hydrogenous ion into the dielectric material by contacting the dielectric material with an alkali solution containing the non-hydrogenous ion, wherein the non-hydrogenous ion has an activation energy of diffusion within the dielectric material in a range of greater than about 0.5 eV to about 3.0 eV;
- and
- forming a control gate adjacent to the dielectric material.
1 more element
Dependencies are inferred from the claim text.