Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus for forming thin film containing at least two different elements

A method of manufacturing a semiconductor device, the method comprising forming a thin film having a predetermined thickness and a predetermined composition on a substrate, the thin film comprising a first element, a second element different from the first element and a third element different from the first element and the second element, by repeating a cycle a plurality of times, the cycle comprising:

• (a) forming a first layer comprising the first element and having a thickness of several atomic layers or less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate;
• (b) forming a second layer comprising the first element and the second element by supplying a gas containing the second element into the process vessel to form a discontinuous layer comprising the second element on the first layer or to modify the first layer without saturating a modifying reaction of the first layer by the gas containing the second element;
• and
• (c) forming a third layer comprising the first element, the second element, and the third element by supplying a gas containing the third element into the process vessel to modify the second layer without saturating a modifying reaction of the second layer by the gas containing the third element.

A method of manufacturing a semiconductor device, the method comprising forming a thin film having a predetermined thickness and a predetermined composition on a substrate, the thin film comprising a first element, a second element different from the first element, a third element different from the second element and a fourth element different from the first element, the second element and the third element, by repeating a cycle a plurality of times, the cycle comprising:

• (a) forming a first layer comprising the first element and having a thickness of several atomic layers or less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate;
• (b) forming a second layer comprising the first element and the second element by supplying a gas containing the second element into the process vessel to form a discontinuous layer comprising the second element on the first layer or to modify the first layer without saturating a modifying reaction of the first layer by the gas containing the second element;
• (c) forming a third layer comprising the first element, the second element and the third element by supplying a gas containing the third element into the process vessel to form a discontinuous layer comprising the third element on the second layer or to modify the second layer without saturating a modifying reaction of the second layer by the gas containing the third element;
• and
• (d) forming a fourth layer comprising the first, the second element, the third element and the fourth element by supplying a gas containing the fourth element into the process vessel to modify the third layer without saturating a modifying reaction of the third layer by the gas containing the fourth element.

A method of processing a substrate, the method comprising forming a thin film having a predetermined thickness and a predetermined composition on the substrate, the thin film comprising a first element, a second element different from the first element and a third element different from the first element and the second element, by repeating a cycle a plurality of times, the cycle comprising:

• (a) forming a first layer comprising the first element and having a thickness of several atomic layers or less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate;
• (b) forming a second layer comprising the first element and the second element by supplying a gas containing the second element into the process vessel to form a discontinuous layer comprising the second element on the first layer or to modify the first layer without saturating a modifying reaction of the first layer by the gas containing the second element;
• and
• (c) forming a third layer comprising the first element, the second element and the third element by supplying a gas containing the third element into the process vessel to modify the second layer without saturating a modifying reaction of the second layer by the gas containing the third element.

A method of processing a substrate, the method comprising forming a thin film having a predetermined thickness and a predetermined composition on the substrate, the thin film comprising a first element, a second element different from the first element, a third element different from the second element and a fourth element different from the first element, the second element and the third element, by repeating a cycle a plurality of times, the cycle comprising:

• (a) forming a first layer comprising the first element and having a thickness of several atomic layers or less than one atomic layer on the substrate by supplying a gas containing the first element into a process vessel accommodating the substrate;
• (b) forming a second layer comprising the first element and the second element by supplying a gas containing the second element into the process vessel to form a discontinuous layer comprising the second element on the first layer or to modify the first layer without saturating a modifying reaction of the first layer by the gas containing the second element;
• (c) forming a third layer comprising the first element, the second element and the third element by supplying a gas containing the third element into the process vessel to form a discontinuous layer comprising the third element on the second layer or to modify the second layer without saturating a modifying reaction of the second layer by the gas containing the third element;
• and
• (d) forming a fourth layer comprising the first element, the second element, the third element and the fourth element by supplying a gas containing the fourth element into the process vessel to modify the third layer without saturating a modifying reaction of the third layer by the gas containing the fourth element.