Method of forming a freestanding semiconductor wafer
AssigneeSaint-Gobain Cristaux ET Dectecteurs
InventorsJean-Pierre Faurie, Bernard Beaumont
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Abstract
A method of forming a freestanding semiconductor wafer includes providing a semiconductor substrate including a semiconductor layer having a back surface and an upper surface opposite the back surface, wherein the semiconductor layer comprises at least one permanent defect between the upper surface and back surface, removing a portion of the back surface of the semiconductor layer and the permanent defect from the semiconductor layer, and forming a portion of the upper surface after removing a portion of the back surface and the permanent defect.
Claims20
A method of forming a freestanding semiconductor wafer comprising:
- providing a semiconductor substrate comprising a semiconductor layer having aback surface and an upper surface opposite the back surface, wherein providing a semiconductor substrate comprises forming a buffer layer overlying a base substrate, the buffer layer including Ga, Al, In, or a combination thereof, and the semiconductor layer comprising at least one permanent defect between the upper surface and back surface;
- removing a portion of the back surface of the semiconductor layer and the permanent defect from the semiconductor layer;
- and
- forming a portion of the upper surface after removing a portion of the back surface and the permanent defect.
A method of forming a freestanding semiconductor wafer comprising:
- forming a buffer layer overlying a base substrate, wherein the buffer layer including Ga, Al, In, or a combination thereof;
- forming a semiconductor layer overlying the buffer layer, wherein the semiconductor layer has a back surface, an upper surface, and a permanent pit extending from an upper surface of the semiconductor layer into the semiconductor layer to a bottom surface;
- removing the bottom surface of the permanent pit;
- and
- forming a portion of the upper surface after removing the bottom surface of the permanent pit.
A method of forming a freestanding semiconductor wafer comprising:
- forming a buffer layer overlying a base substrate, wherein the buffer layer comprises:
- a first film including silicon overlying a surface of the base substrate;
- and
- a second film including Ga, Al, In, or a combination thereof overlying the first film;
- forming a semiconductor layer overlying the buffer layer, wherein the semiconductor layer comprises a permanent defect region including a permanent pit;
- altering the permanent defect region including a portion of the permanent pit within the semiconductor layer;
- and
- forming a portion of the semiconductor layer after altering the permanent defect region and closing the pit.
Dependencies are inferred from the claim text.