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US 9,318,313 B2Granted
Semiconductor structure with low-melting-temperature conductive regions, and method of repairing a semiconductor structure
AssigneeSTMicroelectronics S.r.l.
InventorsAlberto Pagani, Federico Giovanni Ziglioli
Life of this patent
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Abstract
A semiconductor structure includes at least a semiconductor body, a delimiting structure delimiting a cup-shaped recess in the body and a conductive region in the recess. The conductive region is made of a low-melting-temperature material, having a melting temperature lower than that of the materials forming the delimiting structure.
Claims25
A structure, comprising:
- a semiconductor first layer configured to be solid at a temperature;
- a region disposed adjacent to the semiconductor first layer and configured to be solid at the temperature;
- an exposed recess disposed in the region;
- and a coupling pad having a heating element, the coupling pad disposed in the exposed recess and including a first conductive portion configured to be molten at the temperature.
1 more element
An integrated circuit, comprising:
- a semiconductor first layer configured to be solid at a temperature;
- a region disposed adjacent to the semiconductor first layer and configured to be solid at the temperature;
- a recess disposed in the region;
- and a coupling pad having a heating element, the coupling pad disposed in the recess and including a first conductor configured to be molten at the temperature.
1 more element
A system, comprising:
- a first integrated circuit, including a semiconductor first layer configured to be solid at a temperature, a region disposed adjacent to the semiconductor first layer and configured to be solid at the temperature, an exposed recess disposed in the region, and a coupling pad having a heating element, the coupling pad disposed in the exposed recess and including a first conductor configured to be molten at the temperature;
- and a second integrated circuit coupled to the first integrated circuit.
A method, comprising:
- contacting a coupling pad of a semiconductor structure with a member, the coupling pad including a heating element;
- and melting a portion of the coupling pad without melting any other portion of the semiconductor structure.
A method, comprising:
- contacting a coupling pad of a semiconductor structure with a member;
- and
- melting a portion of the coupling pad without melting any other portion of the semiconductor structure;
- the member includes a probe tip;
- contacting the coupling pad includes deforming the coupling pad with the probe tip;
- and
- melting the portion of the coupling pad includes removing a deformation from the coupling pad.
4 more elements
A method, comprising:
- contacting a coupling pad of a semiconductor structure with a member;
- and
- melting a portion of the coupling pad without melting any other portion of the semiconductor structure;
- wherein the semiconductor structure includes a first die;
- wherein contacting the coupling pad includes attaching a terminal of a second die to the coupling pad;
- and
- detaching the terminal of the second die from the coupling pad of the first die while the portion of the coupling pad is molten.
4 more elements
Dependencies are inferred from the claim text.