Zinc oxide sputtering target and method for producing same
AssigneeNGK Insulators, Ltd.
InventorsJun Yoshikawa, Katsuhiro Imai, Koichi Kondo
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Abstract
Provided is a zinc oxide sputtering target, which can effectively suppress the occurrence of break or crack in the target during sputtering to enable production of a zinc oxide transparent conductive film with high productivity. The zinc oxide sputtering target is composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more.
Claims11
A zinc oxide sputtering target composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more.
A method for producing a zinc oxide sputtering target comprising the steps of:
- providing a plate-like zinc oxide powder having a mean volume particle diameter D50 of 0.1 to 1.0 μm;
- orienting the plate-like zinc oxide powder by a method utilizing shearing stress to obtain a crystallographically oriented green compact;
- and
- firing the crystallographically oriented green compact at a temperature of 1000 to 1400° C. to obtain the zinc oxide sputtering target composed of a zinc oxide sintered body comprising zinc oxide crystal grains that are oriented,
- wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more.
Dependencies are inferred from the claim text.