Fabrication of nano-structure electrodes for ultra-capacitor
AssigneeEmpire Technology Development LLC
InventorQingkang Wang
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Abstract
Techniques described herein generally relate to the fabrication of ultra-capacitor. In one or more embodiments of the present disclosure, methods for fabricating an ultra-capacitor are described that may include preparing a substrate surface of a silicon wafer. The methods may further include etching one or more nano-structures on the substrate surface of the silicon wafer with a galvanic displacement process, and constructing electrodes for the ultra-capacitor from the silicon wafer with the one or more nano-structures.
Claims14
A method for constructing an electric double-layer ultra-capacitor, comprising:
- preparing a substrate surface of a silicon wafer;
- etching one or more nano-structures on the substrate surface of the silicon wafer with a galvanic displacement process, wherein the one or more nano-structures contain silicon nano-wires with a height-to-diameter ratio that is above a first predetermined threshold of about 100:1;
- and
- constructing the double-layer ultra-capacitor using two wafer segments from the silicon wafer as two electrodes, wherein each of the wafer segments contain a respective subset of silicon nano-wires, the constructing comprising:
- positioning the two wafer segments having their respective subset of nano-wires facing each other, wherein a distance between the two respective subsets of nano-wires is smaller than a second predetermined threshold of about 0.5 μm;
- and
- configuring the two wafer segments as the two electrodes for the double-layer ultra-capacitor.
An electric double-layer ultra-capacitor, comprising:
- a first electrode and a second electrode configured in cooperative operation, wherein
- each of the first electrode and the second electrode have a respective nano-structure that contains a plurality of nano-wires with a height-to-diameter ratio that is above a first predetermined threshold of about 100:1,
- the first electrode's nano-structure and the second electrode's nano-structure are configured to face each other, and
- a distance between the first electrode's nano-structure and the second electrode's nano-structure is smaller than a second predetermined threshold of about 0.5 μm.
Dependencies are inferred from the claim text.