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US 9,318,220 B2Granted
Memory cell coupling compensation
AssigneeMicron Technology, Inc.
InventorsZhenlei Shen, William H. Radke, Peter Feeley
Life of this patent
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Abstract
Methods for memory cell coupling compensation and apparatuses configured to perform the same are described. One or more methods for memory cell coupling compensation includes determining a state of a memory cell using a voltage that is changed in accordance with a first memory cell coupling compensation voltage, performing an error check on the state of the memory cell, and determining the state of the memory cell using a voltage that is changed in accordance with a second memory cell coupling compensation voltage in response to the error check failing.
Claims18
A method for memory cell coupling compensation, comprising:
- determining a state of a memory cell by sensing the memory cell with a first voltage that is changed in accordance with a first memory cell coupling compensation voltage;
- performing an error check on the state of the memory cell;
- determining a threshold voltage difference between a first number of memory cells of a target page coupled to memory cells programmed to a first program state and a second number of memory cells of the target page coupled to memory cells programmed to a second program state;
- and
- determining the state of the memory cell by sensing the memory cell with a second voltage that is changed in accordance with a second memory cell coupling compensation voltage in response to the error check failing, wherein the second memory cell coupling compensation voltage is based on the determined threshold voltage difference between the first number of memory cells of the target page coupled to memory cells programmed to the first program state and the second number of memory cells of the target page coupled to memory cells programmed to the second program state.
2 more elements
A method for memory cell coupling compensation, comprising:
- determining a threshold voltage difference between a first number of memory cells of a target page coupled to memory cells programmed to a first program state and a second number of memory cells of the target page coupled to memory cells programmed to a second program state;
- determining a memory cell coupling compensation voltage based, at least partially, on the determined threshold voltage change between a first number of memory cells of a target page coupled to a first number memory cells programmed to the first program state and the second number of memory cells of the target page coupled to the second number of memory cells programmed to the second program state;
- and
- determining a state of a memory cell using a sensing voltage that is changed in accordance with the memory cell coupling compensation voltage, wherein the memory cell is part of the target page.
1 more element
A method for memory cell coupling compensation comprising:
- determining a state of a memory cell by sensing the memory cell with a first voltage that is changed in accordance with a first memory cell coupling compensation voltage;
- performing an error check on the state of the memory cell;
- determining the state of the memory cell by sensing the memory cells with a second voltage that is changed in accordance with a second memory cell coupling compensation voltage in response to the error check failing, wherein the first memory cell coupling compensation voltage is different than the second memory cell coupling compensation voltage;
- performing another error check on the state of the memory cell;
- determining a threshold voltage difference between a first number of memory cells of a target page coupled to memory cells programmed to a first program state and a second number of memory cells of the target page coupled to memory cells programmed to a second program state;
- determining a third memory cell coupling compensation voltage based, at least partially, on the determined threshold voltage change between a first number of memory cells of a target page coupled to a first number memory cells programmed to a first program state and a second number of memory cells of the target page coupled to a second number of memory cells programmed to a second program state;
- and
- determining the state of the memory cell using a sensing voltage that is changed in accordance with the third memory cell coupling compensation voltage, wherein the memory cell is part of the target page.
5 more elements
Dependencies are inferred from the claim text.