Systems and methods to update reference voltages of non-volatile memory

A method comprising:

• in a data storage device that includes a non-volatile memory, the non-volatile memory including a group of storage elements that are programmable to a state of a set of states, the state corresponding to a range of threshold voltage values:
• reading first data from the non-volatile memory, the first data indicating a first count of storage elements of the group that have a first activation status when sensed with a first reference voltage at a first time;
• reading second data from the non-volatile memory, the second data indicating a second count of storage elements of the group that have the first activation status when sensed with the first reference voltage at a second time;
• and
• generating an updated first reference voltage at least partially based on an amount of difference between the first count and the second count and based on one or more parameters corresponding to a distribution of threshold voltages of storage elements associated with the state at the first time.