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US 9,318,203 B2Granted
Semiconductor device being capable of improving program speed and program disturbance characteristics
AssigneeSK hynix Inc.
InventorHye Lyoung Lee
Life of this patent
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Abstract
A semiconductor device includes memory cells electrically coupled to word lines. In addition, the semiconductor device includes an operation circuit performing a program loop on memory cells electrically coupled to a selected word line. Further, the operation circuit increases a program permission voltage applied to a bit line of a program target memory cell when a number of times in which the program loop is performed exceeds a reference number.
Claims14
A semiconductor device, comprising:
- memory cells electrically coupled to word lines;
- and
- an operation circuit suitable for performing a program loop on memory cells electrically coupled to a selected word line, wherein the operation circuit is suitable for increasing a program permission voltage applied to a bit line of a program target memory cell when a number of times in which the program loop is performed exceeds a reference number.
- wherein the word lines are configured between a source select line and a drain select line, and
- the reference number increases as the selected word line is closer to the drain select line.
2 more elements
A semiconductor device, comprising:
- a memory block including memory strings having a three-dimensional structure, wherein each of the memory strings includes a drain select transistor, memory cells and a source select transistor electrically coupled in a vertical direction between a bit line and a common source line;
- and
- an operation circuit suitable for performing a program loop on selected memory cells, and increasing a program permission voltage applied to the bit line of a program target memory cell when a number of times the program loop is performed exceeds a reference number,
- wherein the reference number increases as the selected memory cell is closer to the drain select line.
1 more element
Dependencies are inferred from the claim text.