DRAM wordline control circuit, DRAM module and method of controlling DRAM wordline voltage

A method of controlling DRAM wordline voltage, comprising:

• receiving a first control signal and a feedback signal corresponding to a wordline voltage signal;
• generating a second control signal according to the first control signal and the feedback signal corresponding to the wordline voltage signal, wherein the step further comprises:
• setting the second control signal enabled when the first control signal is enabled and the feedback signal corresponding to the wordline voltage signal is smaller than a threshold voltage;
• receiving the second control signal and outputting an oscillating signal when the second control signal is enabled;
• and
• increasing a voltage value of the wordline voltage signal when the oscillating signal is outputted.

A DRAM module, comprising:

• a sensing module configured to receive a first control signal and a feedback signal corresponding to a wordline voltage signal, and generate a second control signal according to the first control signal and the feedback signal corresponding to the wordline voltage signal, wherein the sensing module is further configured to set the second control signal enabled when the first control signal is enabled and the feedback signal corresponding to the wordline voltage signal is smaller than a threshold voltage;
• an oscillator electrically connected with the sensing module, the oscillator being configured to receive the second control signal and output an oscillating signal when the second control signal is enabled;
• and
• a charging pump electrically connected with the oscillator, the charging pump being configured to increase a voltage value of the wordline voltage signal when the oscillator outputs the oscillating signal.