Word line driver circuit for semiconductor memory device

A word line driver circuit of a semiconductor memory device, comprising:

• a first active region;
• a second active region spaced apart from the first active region at a first interval in a first direction and spaced apart from the first active region in a second direction, which is substantially perpendicular to the first direction;
• a third active region spaced apart from the second active region at a second interval in the first direction;
• a fourth active region spaced apart from the third active region at a third interval in the first direction and spaced apart from the third active region in the second direction;
• first contacts formed at both sides of ends of the first to fourth active regions;
• second contacts formed in the first to fourth active regions between the first contacts;
• a first gate region crossing between the first contact formed on a second end of the first active region and the second contact formed in the first active region and between the first contact formed on a first end of the second active region and the second contact formed in the second active region in a straight line, counterclockwise surrounding a part of the second contact formed in the first active region, and clockwise surrounding a part of the second contact formed in the second active region;
• and
• a second gate region between the first contact formed on a second end of the third active region and the second contact formed in the third active region and between the first contact formed on a first end of the fourth active region and the second contact formed in the fourth active region in a straight line, counterclockwise surrounding a part of the second contact formed in the third active region, and clockwise surrounding a part of the second contact formed in the fourth active region,
• wherein the first gate region partially overlaps with the second gate region.

A word line driver circuit of a semiconductor memory device, comprising:

• a first active region;
• a second active region spaced apart from the first active region in a first direction and spaced apart from the first active region in a second direction, which is substantially perpendicular to the first direction;
• a third active region that partially overlaps with the first active region in the second direction;
• a fourth active region that partially overlaps with the second active region in the second direction;
• first contacts formed at first ends of the first and second active regions, second ends of the third and fourth active regions, a first common end where the first and third active regions overlap with each other, and a second common end where the second and fourth active regions overlap with each other;
• second contacts formed in the first to fourth active regions between the first contacts;
• a first gate region between the first contact formed on the first common end and the second contact formed in the first active region and between the first contact formed on the first end of the second active region and the second contact formed in the second active region in a straight line, counterclockwise surrounding a part of the second contact formed in the first active region, and clockwise surrounding a part of the second contact formed in the second active region;
• and
• a second gate region between the first contact formed on the second end of the third active region and the second contact formed in the third active region and between the first contact formed on the second common end and the second contact formed in the fourth active region in a straight line, counterclockwise surrounding a part of the second contact formed in the third active region, and clockwise surrounding a part of the second contact formed in the fourth active region,
• wherein an end of the first gate region which clockwise surrounds the second contact formed in the second active region and an end of the second gate region which counterclockwise surrounds part of the second contact formed in the third active region are spaced apart from each other in the first direction and face each other.