Nonvolatile memory device, read method for nonvolatile memory device, and memory system incorporating nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsChul Bum Kim, Hyung Gon Kim, Chul Ho Lee, Hong Seok Chang
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Abstract
A method of performing a read operation on nonvolatile memory device comprises receiving a read command, receiving addresses, detecting a transition of a read enable signal, generating a strobe signal based on the transition of the read enable signal, reading data corresponding to the received addresses, and outputting the read data after the strobe signal is toggled a predetermined number of times.
Claims20
A method of reading a nonvolatile memory device including a plurality of nonvolatile memory cells, the method comprising:
- receiving a read command and a read address;
- in response to the read command, reading data from first memory cells corresponding to the read address among the plurality of nonvolatile memory cells;
- receiving a read enable signal, the read enable signal being toggled after the receiving the read command and the read address;
- generating a strobe signal based on the read enable signal;
- outputting the strobe signal to an external device;
- and
- outputting, to the external device, the data read from the first memory cells in synchronization with the strobe signal in response to a latency value, the latency value being corresponding to the number of toggling of the strobe signal between the receiving the read command and the read address and the outputting the data, the latency value being zero or a positive integer,
- wherein the read enable signal remains constant while the read command and the read address are received, and
- the latency value is stored in the nonvolatile memory device and is programmable with a set command.
A nonvolatile memory device, comprising:
- a plurality of nonvolatile memory cells included in the nonvolatile memory device;
- a program circuit configured to store a latency value;
- an address decoder configured to receive a read address and configured to select at least one memory cell corresponding to the read address among the plurality of nonvolatile memory cells;
- a control logic configured to receive a read command and a read enable signal;
- a read and write circuit configured to read data from the at least one of the memory cell in response to the read command;
- and
- an input/output driver configured to generate a strobe signal in response to the read enable signal, configured to output the strobe signal to an external device, and configured to output to the external device the data in synchronization with the strobe signal,
- wherein outputting the data read from the at least one of the memory cell starts after the strobe signal is toggled N times, N is corresponding to a latency value
- the read enable signal is not toggled during the read command is received by the control circuit and the read address is received by the address decoder,
- the read enable signal is toggled after the read command is received by the control circuit and the read address is received by the address decoder, and
- the latency value is programmable using a set command provided by the external device.
A nonvolatile memory system, comprising:
- a controller configured to provide a read enable signal, a read command and a read address;
- and
- a nonvolatile memory device including a plurality of nonvolatile memory cells, configured to read data from first memory cells corresponding to the read address among the plurality of nonvolatile memory cells in response to the read command, configured to generate a strobe signal in response to the read enable signal, and configured to store a latency value;
- wherein the nonvolatile memory device is configured to output the data to the controller in synchronization with the strobe signal in response to the latency value;
- the controller configured to control the read enable signal remaining constant while the read command and the read address are received by the nonvolatile memory device, and configured to control the read enable signal toggling after the read command and the read address are received by the nonvolatile memory device,
- a start of the outputting the data occurs after the strobe signal is toggled N times, N being a value corresponding to the latency value, and
- the latency value is programmable with a set command.
A method of reading a nonvolatile memory device, comprising:
- receiving a read command and a read address;
- reading data from a plurality of nonvolatile memory cells corresponding to the read address in response to the read command, the plurality of nonvolatile memory cells being included in the nonvolatile memory device,
- receiving a read enable signal;
- generating a strobe signal in response to toggling of the read enable signal;
- and
- outputting the data read from the plurality of nonvolatile memory cells together with the strobe signal to an external device, wherein a start of the outputting the data occurs after the strobe signal is toggled N times, N being a value corresponding to a latency value, the latency value being programmable by a set command,
- wherein the read enable signal remains constant while the read command and the read address are received, and
- the read enable signal is toggled after the read command and the read address are received.
Dependencies are inferred from the claim text.