Recessed antiferromagnetic design with antiparallel pinned stitch layers for improved pinning field

A device,

• comprising:
• an antiferromagnetic layer;
• a first stitch layer exchange coupled with the antiferromagnetic layer, the first stitch layer having a magnetic orientation substantially parallel to a magnetic orientation of the antiferromagnetic layer;
• a second stitch layer exchange coupled with the first stitch layer and having a magnetic orientation substantially antiparallel to the magnetic orientation of the first stitch layer;
• a pinned layer structure exchange coupled with the second stitch layer;
• a free layer;
• and
• a spacer layer between the free layer and the pinned layer structure,
• wherein an end of the antiferromagnetic layer facing a sensing face of the device is recessed from the sensing face,
• wherein a width of at least one of the stitch layers is greater than a width of the pinned layer structure,
• wherein the widths are oriented parallel to planes of deposition of the respective layer and parallel to the sensing face of the device.

A device, comprising:

• an antiferromagnetic layer;
• a first stitch layer exchange coupled with the antiferromagnetic layer, the first stitch layer having a magnetic orientation substantially parallel to a magnetic orientation of the antiferromagnetic layer;
• a second stitch layer exchange coupled with the first stitch layer and having a magnetic orientation substantially antiparallel to the magnetic orientation of the first stitch layer;
• a pinned layer structure, a portion of the pinned layer being exchange coupled with the second stitch layer, wherein a magnetic orientation of the portion of the pinned layer is substantially parallel with the magnetic orientation of the second stitch layer;
• a free layer;
• and
• a spacer layer between the free layer and the pinned layer structure,
• wherein an end of the antiferromagnetic layer facing a sensing face of the device is recessed from the sensing face,
• wherein ends of the stitch layers facing the sensing face of the device are recessed from the sensing face,
• wherein a width of at least one of the stitch layers is greater than a width of the free layer,
• wherein the widths are oriented parallel to planes of deposition of the respective layer and parallel to the sensing face of the device.