Symmetry based air pocket detection methods and systems
AssigneeSunEdison Semiconductor Limited
InventorJohn F. Valley
Life of this patent
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Abstract
Methods and systems for use in detecting an air pocket in a single crystal material are described. One example method includes providing a matrix including a plurality of data units, the plurality of data units including image data related to a region of interest of the single crystal material; defining a first half and a second half of the matrix based on a first axis passing through the center of the matrix; determining, by a processor, a difference between each data unit of the first half and a corresponding data unit of the second half; calculating, by the processor, a first index value based on the determined differences; and identifying an air pocket within the single crystal material based on the first index value and a predetermined threshold.
Claims20
A computer-implemented method for use in detecting an air pocket in a single crystal material, said method comprising:
- providing a matrix including a plurality of data units and a center, the plurality of data units including image data related to a region of interest of the single crystal material;
- defining a first half and a second half of the matrix based on a first axis passing through the center of the matrix;
- determining, by a processor, a difference between each data unit of the first half and a corresponding data unit of the second half;
- calculating, by the processor, a first index value based on the determined differences;
- defining a third half and a fourth half of the matrix based on a second axis passing through the center of the matrix, the second axis being different than the first axis;
- determining, by the processor, a difference between each data unit of the third half and a corresponding data unit of the fourth half;
- calculating, by the processor, a second index value based on the differences of the corresponding data units of the third and fourth halves;
- and
- identifying an air pocket within the single crystal material based on the first index value, the second index value, and a predetermined threshold.
A detection system for use in detecting an air pocket within a material, said detection system comprising:
- a light source configured to emit near-infrared (NIR) light toward a material;
- a detection device positioned adjacent to the material to capture image data based on light passing through the material;
- and
- a processor coupled to said light source and said detection device, said processor configured to:
- provide a matrix including a plurality of data units and a center, the plurality of data units including image data related to a region of interest of the single crystal material;
- define a first half and a second half of the matrix based on a first axis passing through the center of the matrix;
- determine a difference between each data unit of the first half and a corresponding data unit of the second half;
- calculate a first index value based on the determined differences;
- define a third half and a fourth half of the matrix based on a second axis passing through the center of the matrix, the second axis being different than the first axis;
- determine a difference between each data unit of the third half and a corresponding data unit of the fourth half;
- calculate a second index value based on the differences of the corresponding data units of the third and fourth halve;
- and
- identify an air pocket within the single crystal material based on the first index value, the second index value, and a predetermined threshold.
One or more non-transitory computer-readable storage media having computer-executable instructions embodied thereon, wherein when executed by at least one processor, said computer-executable instructions cause the at least one processor to:
- identify a matrix including a plurality of data units and a center, the plurality of data units including image data related to a region of interest of the single crystal material;
- define a first half and a second half of the matrix based on a first axis passing through the center of the matrix;
- determine a difference between each data unit of the first half and a corresponding data unit of the second half;
- calculate a first index value based on the determined differences;
- define a third half and a fourth half of the matrix based on a second axis passing through the center of the matrix, the second axis being different than the first axis;
- determine a difference between each data unit of the third half and a corresponding data unit of the fourth half;
- calculate a second index value based on the differences of the corresponding data units of the third and fourth halves;
- and
- identify an air pocket within the single crystal material based on the first index value, the second index value, and a predetermined threshold.
Dependencies are inferred from the claim text.