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US 9,317,811 B2Granted
Diamond material
AssigneeElement Six Technologies Limited
InventorsGeoffrey Alan Scarsbrook, Daniel James Twitchen, Matthew Lee Markham
Life of this patent
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Abstract
Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a low 13C content, methods for producing the same and a solid state system comprising such single crystal diamond are described.
Claims8
A solid state system comprising:
- a host material comprising single crystal CVD diamond material having a concentration of neutral substitutional nitrogen of 10 ppb or less, a fraction of total C atoms that are 12C atoms of 99% or more, and a concentration of paramagnetic defects of 1 ppm or less:
- and
- a quantum spin defect, said quantum spin defect having an electronic spin state with a T2 at room temperature of about 900 μs or more, wherein the quantum spin defect is an NV center,
- wherein the quantum spin defect is disposed within the single crystal CVD diamond material and positioned within about 100 μm of a surface of the single crystal CVD diamond material, said surface having a surface roughness Ra of about 50 nm or less.
1 more element
Dependencies are inferred from the claim text.